FQD19N10LTFN-Channel 100 V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
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ABRmicro #.ABR2045-FQD19N-962375
ManufacturerOnsemi
MPN #.FQD19N10LTF
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQD1
Continuous Drain Current (ID) @ 25°C15.6A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)870 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 50W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 7.8A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FQD19N10LTF is an N-Channel MOSFET designed for power switching applications, featuring a drain-source voltage rating of 100 volts and a continuous current capacity of 15.6A at Tc. It offers a power dissipation of 2.5W at Ta and 50W at Tc, housed in a surface-mount TO-252AA package, making it suitable for compact designs. The device exhibits a gate charge capacitance of 870 pF at 25 V, with RDS(on) resistance of 100 milliohms at a current of 7.8A and gate-source voltage of 10V, facilitating efficient conduction and control.
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