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FQD13N06LTFN-Channel 60 V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

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ABRmicro #.ABR2045-FQD13N-972930
ManufacturerOnsemi
MPN #.FQD13N06LTF
Estimated Lead Time-
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQD1
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.4 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 28W (Tc)
RDS(on) Drain-to-Source On Resistance115mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD13N06LTF is an N-channel MOSFET manufactured by Onsemi, designed for high-efficiency power conversion and switching applications. It features a drain-source voltage rating of 60V and a maximum continuous drain current of 11A when mounted on a heat-dissipating surface, with power dissipation capabilities of up to 28W in optimal conditions. The device operates with a gate-source voltage threshold of 2.5V at a 250µA gate current. It has a total gate charge of 350 pF at 25V, accommodating quick switching operations. The MOSFET is housed in a compact TO-252AA surface-mount package, supporting space-efficient circuit designs. Additionally, it provides protection against over-voltage conditions with a maximum gate-source voltage of ±20V.
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