Image is for reference only, the actual product serves as the standard.
FQB85N06TM_AM002N-Channel 60 V 85A (Tc) 3.75W (Ta), 160W (Tc) Surface Mount TO-263 (D2PAK)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQB85N-1005133
ManufacturerOnsemi
MPN #.FQB85N06TM_AM002
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQB8
Continuous Drain Current (ID) @ 25°C85A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)112 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4120 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 160W (Tc)
RDS(on) Drain-to-Source On Resistance10mOhm @ 42.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB85N06TM_AM002 is a surface mount N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum voltage of 60V and current load of 85A when mounted on a case. It is housed in a TO-263 (D2PAK) package, facilitating efficient thermal management with a power dissipation capacity of 160W when properly mounted. With a maximum gate-to-source voltage of ±25V and a gate charge of 4120 pF at 25V, this component is engineered for reliable operation under substantial electrical loads while maintaining stability in various electronic configurations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.