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FQB85N06TM_AM002N-Channel 60 V 85A (Tc) 3.75W (Ta), 160W (Tc) Surface Mount TO-263 (D2PAK)
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ABRmicro #.ABR2045-FQB85N-1005133
ManufacturerOnsemi
MPN #.FQB85N06TM_AM002
Estimated Lead Time-
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DatasheetFQB85N06, FQI85N06(PDF)
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQB8
Continuous Drain Current (ID) @ 25°C85A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)112 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4120 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 160W (Tc)
RDS(on) Drain-to-Source On Resistance10mOhm @ 42.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB85N06TM_AM002 is a surface mount N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum voltage of 60V and current load of 85A when mounted on a case. It is housed in a TO-263 (D2PAK) package, facilitating efficient thermal management with a power dissipation capacity of 160W when properly mounted. With a maximum gate-to-source voltage of ±25V and a gate charge of 4120 pF at 25V, this component is engineered for reliable operation under substantial electrical loads while maintaining stability in various electronic configurations.
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