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FQB7P20TMP-Channel 200 V 7.3A (Tc) 3.13W (Ta), 90W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB7P2-983637
ManufacturerOnsemi
MPN #.FQB7P20TM
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQB7P20TM Datasheet(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQB7P20
Continuous Drain Current (ID) @ 25°C7.3A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)770 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 90W (Tc)
RDS(on) Drain-to-Source On Resistance690mOhm @ 3.65A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQB7P20TM Datasheet
Environmental Information
Material Declaration FQB7P20TMonsemi REACHonsemi RoHS
PCN Assembly/Origin
Multiple Parts 23/Jun/2022
PCN Design/Specification
Description Chg 01/Apr/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Dev Box Chgs 1/Jul/2021Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part FQB7P20TM, manufactured by Onsemi, is a P-channel MOSFET designed for surface mounting in a TO-263 (D2PAK) package. It is capable of handling a maximum voltage of 200 V and a current of 7.3A under typical conditions with a thermal capacity of 3.13W in free air and up to 90W with proper heat sinking (Tc). This MOSFET features a gate charge capacitance of 770 pF at 25 V and requires a gate-source voltage of 10V for operation.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.