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FQB7P06TMP-Channel 60 V 7A (Tc) 3.75W (Ta), 45W (Tc) Surface Mount TO-263 (D2PAK)
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ABRmicro #.ABR2045-FQB7P0-956993
ManufacturerOnsemi
MPN #.FQB7P06TM
Estimated Lead Time-
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DatasheetFQB7P06, FQI7P06(PDF)
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQB7
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)8.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)295 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 45W (Tc)
RDS(on) Drain-to-Source On Resistance410mOhm @ 3.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB7P06TM is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications, housed in a TO-263 (D2PAK) package. It can handle a maximum voltage of 60 V and a continuous current of up to 7A under certain conditions (Tc). The MOSFET offers a low on-resistance of 410 mOhm at a current of 3.5A and gate-source voltage of 10V, with a gate charge of 8.2 nC at the same gate-source voltage. It is rated for a power dissipation of 3.75W when mounted on a standard PCB (Ta) and up to 45W with proper thermal management on the case (Tc).
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