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FQB7N20TMN-Channel 200 V 6.6A (Tc) 3.13W (Ta), 63W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB7N2-1013596
ManufacturerOnsemi
MPN #.FQB7N20TM
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQB7N20, FQI7N20(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQB7
Continuous Drain Current (ID) @ 25°C6.6A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 63W (Tc)
RDS(on) Drain-to-Source On Resistance690mOhm @ 3.3A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQB7N20, FQI7N20
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB7N20TM is an N-channel MOSFET manufactured by Onsemi, designed for surface mount applications, packaged in a TO-263 (D2PAK) configuration. It operates at a maximum voltage of 200 V and supports a continuous current of 6.6A when properly cooled via the case (Tc), with power dissipation rates of 3.13W at ambient temperature (Ta) and 63W when optimally mounted on a heat-conducting surface (Tc). The device features a gate-source voltage of 10V and has an input capacitance of 400 pF at 25 V, making it suitable for various driving and switching purposes in electronic systems where efficient power management is critical.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.