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FQB6N80TMN-Channel 800 V 5.8A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB6N8-993834
ManufacturerOnsemi
MPN #.FQB6N80TM
Estimated Lead Time-
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DatasheetDatasheetFQB6N80(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFQB6N80
Continuous Drain Current (ID) @ 25°C5.8A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 158W (Tc)
RDS(on) Drain-to-Source On Resistance1.95Ohm @ 2.9A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQB6N80
Environmental Information
Material Declaration FQB6N80TMonsemi RoHS
PCN Assembly/Origin
Mult Dev Assem/Test Add 25/Jul/2019
PCN Design/Specification
Description Chg 01/Apr/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 23/Dec/2021
PCN Packaging
Mult Dev Box Chgs 1/Jul/2021Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB6N80TM is a surface-mount N-Channel MOSFET manufactured by Onsemi. It is designed to handle high voltage and current, supporting up to 800 V and 5.8 A at a case temperature (Tc), with a power dissipation of 3.13 W in ambient conditions (Ta) and 158 W when mounted on a case (Tc). Encased in a TO-263 (D2PAK) package, it features a gate-source voltage of ±30 V, a threshold voltage of 10 V, and has a total gate charge of 31 nC at 10 V. This makes it suitable for high-power applications where efficient thermal and electrical performance is critical.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.