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FQB6N40CTMN-Channel 400 V 6A (Tc) 73W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB6N4-927717
ManufacturerOnsemi
MPN #.FQB6N40CTM
Estimated Lead Time-
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DatasheetDatasheetFQB6N40C(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQB6N40
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)625 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation73W (Tc)
RDS(on) Drain-to-Source On Resistance1Ohm @ 3A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQB6N40C
Environmental Information
Material Declaration FQB6N40CTMonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Assembly Chgs 21/Dec/2020
PCN Design/Specification
Description Chg 01/Apr/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 23/Dec/2021
PCN Packaging
Mult Dev Box Chgs 1/Jul/2021Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB6N40CTM is an N-Channel MOSFET manufactured by Onsemi, designed for high-efficiency switching applications. This device is encapsulated in a surface-mount TO-263 (D2PAK) package, which supports easier integration into various electronic assemblies. It operates with a maximum drain-source voltage of 400 V and can deliver up to 6A of continuous drain current at a case temperature, dissipating 73W of power under similar conditions. Featuring a gate threshold voltage of 10V, it offers a gate charge of 20 nC at that voltage, facilitating efficient switching performance. Additionally, it has an on-resistance of 1 Ohm at 3A and 10V, making it a reliable choice for power management in compact designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.