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FQB50N06LTMN-Channel 60 V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB50N-1031022
ManufacturerOnsemi
MPN #.FQB50N06LTM
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQB50N06L(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFQB50N06
Continuous Drain Current (ID) @ 25°C52.4A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1630 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 121W (Tc)
RDS(on) Drain-to-Source On Resistance21mOhm @ 26.2A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQB50N06L
Environmental Information
Material Declaration FQB50N06LTMonsemi REACHonsemi RoHS
PCN Assembly/Origin
Multiple Parts 23/Jun/2022
PCN Design/Specification
Description Chg 01/Apr/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Dev Box Chgs 1/Jul/2021Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB50N06LTM by Onsemi is an N-Channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed for efficient power handling. It supports a drain-source voltage of 60V and can deliver a continuous current of up to 52.4A under specific conditions with a power dissipation of up to 121W when mounted on a suitable heat sink. The MOSFET comes in a TO-263 (D2PAK) surface-mount package, which aids in thermal management and is suitable for automated assembly processes. Featuring a gate-source voltage rating of ±20V and a capacitance of 1630 pF at 25V, the device is engineered to handle demanding switching tasks effectively.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.