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FQB4P40TMP-Channel 400 V 3.5A (Tc) 3.13W (Ta), 85W (Tc) Surface Mount TO-263 (D2PAK)
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ABRmicro #.ABR2045-FQB4P4-1031314
ManufacturerOnsemi
MPN #.FQB4P40TM
Estimated Lead Time-
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DatasheetFQB4P40, FQI4P40(PDF)
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQB4
Continuous Drain Current (ID) @ 25°C3.5A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)680 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 85W (Tc)
RDS(on) Drain-to-Source On Resistance3.1Ohm @ 1.75A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FQB4P40TM is a P-Channel MOSFET designed for high-voltage applications, featuring a drain-source voltage rating of 400 V and a continuous drain current of 3.5 A at the case temperature. It is housed in a TO-263 (D2PAK) surface-mount package, which allows for efficient thermal management with a power dissipation of 3.13 W for ambient conditions and 85 W for case temperature. The device has a gate charge of 23 nC at 10 V, and a gate-source threshold voltage of 5 V at a drain current of 250 µA. Its input capacitance is 680 pF at 25 V.
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