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FQB32N20CTMN-Channel 200 V 28A (Tc) 3.13W (Ta), 156W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB32N-939934
ManufacturerOnsemi
MPN #.FQB32N20CTM
Estimated Lead Time-
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DatasheetDatasheetFQB32N20C, FQI32N20C(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQB3
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2220 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 156W (Tc)
RDS(on) Drain-to-Source On Resistance82mOhm @ 14A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQB32N20C, FQI32N20C
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB32N20CTM is an N-channel MOSFET manufactured by Onsemi, suitable for power management applications. It can handle a drain-source voltage of 200V and a continuous drain current of 28A when mounted on a suitable heatsink, or 3.13W when used in free air conditions, with a maximum power dissipation of 156W at the case. This device is housed in a surface mount TO-263 (D2PAK) package. It features a gate threshold voltage of 10V and presents a low on-state resistance of 82mOhm at a 14A drain current with a 10V gate-source voltage. Additionally, the gate-source voltage at a test current of 250µA is 4V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.