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FQB10N60CTMN-Channel 600 V 9.5A (Tc) 3.13W (Ta), 156W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB10N-1013014
ManufacturerOnsemi
MPN #.FQB10N60CTM
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQB10N60C, FQI10N60C(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFQB1
Continuous Drain Current (ID) @ 25°C9.5A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)57 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2040 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 156W (Tc)
RDS(on) Drain-to-Source On Resistance730mOhm @ 4.75A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQB10N60C, FQI10N60C
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB10N60CTM is a power MOSFET manufactured by Onsemi, designed for high-efficiency switching applications. It is an N-Channel MOSFET with a maximum drain-source voltage of 600 V and a continuous drain current of 9.5 A at a case temperature (Tc). The device is housed in a surface-mount TO-263 (D2PAK) package, which allows for efficient heat dissipation with a maximum power dissipation of 156 W at Tc. It has a gate threshold voltage of 4V at a gate-source current of 250µA and a total gate charge of 57 nC at 10 V, providing swift switching characteristics. The MOSFET exhibits an on-resistance of 730mOhm at a drain current of 4.75 A and a gate-source voltage of 10 V, ensuring low conduction losses.
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