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FQAF65N06N-Channel 60 V 49A (Tc) 86W (Tc) Through Hole TO-3PF

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ABRmicro #.ABR2045-FQAF65-935440
ManufacturerOnsemi
MPN #.FQAF65N06
Estimated Lead Time-
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DatasheetDatasheetFQAF65N06(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQAF6
Continuous Drain Current (ID) @ 25°C49A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)65 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2410 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation86W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 24.5A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQAF65N06
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQAF65N06 is an N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum of 60 volts and 49 amperes (Tc) with a power dissipation capability of up to 86 watts (Tc). This device is encapsulated in a TO-3PF package suitable for through-hole mounting. With a gate charge of 65 nanocoulombs at 10 volts, it is well-suited for efficient switching. This MOSFET features a robust metal oxide semiconductor structure, making it a reliable choice for a variety of general-purpose applications where efficient power management is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.