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FQAF33N10N-Channel 100 V 25.8A (Tc) 83W (Tc) Through Hole TO-3PF

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ABRmicro #.ABR2045-FQAF33-925368
ManufacturerOnsemi
MPN #.FQAF33N10
Estimated Lead Time-
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DatasheetDatasheetFQAF33N10(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQAF3
Continuous Drain Current (ID) @ 25°C25.8A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)51 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance52mOhm @ 12.9A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQAF33N10
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQAF33N10 is an N-Channel MOSFET manufactured by Onsemi, designed for use in power switching and amplification. It is capable of handling a maximum drain-source voltage of 100 V and a continuous current of up to 25.8 A when mounted to a suitable heatsink, with a power dissipation of 83 W under similar conditions. The MOSFET features a low on-resistance of 52 milliohms at 12.9 A with a gate-source voltage of 10 V, ensuring efficient performance with minimal power loss. Encased in a TO-3PF package for through-hole mounting, it also offers a gate charge capacitance of 1500 pF at 25 V, and a threshold gate-source voltage of 10 V, making it a practical choice for high-power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.