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FQAF12P20P-Channel 200 V 8.6A (Tc) 70W (Tc) Through Hole TO-3PF

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ABRmicro #.ABR2045-FQAF12-997610
ManufacturerOnsemi
MPN #.FQAF12P20
Estimated Lead Time-
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DatasheetDatasheetFQAF12P20(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQAF1
Continuous Drain Current (ID) @ 25°C8.6A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation70W (Tc)
RDS(on) Drain-to-Source On Resistance470mOhm @ 4.3A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQAF12P20
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQAF12P20 is a P-channel power MOSFET manufactured by Onsemi, designed for efficient power control and management. It operates at a maximum voltage of 200 V and can handle a continuous current of 8.6A when attached to a suitable heat sink. The component can dissipate up to 70 watts of power under optimal conditions, owing to its robust design in a TO-3PF through-hole package. This MOSFET features a gate-source threshold voltage of 10V, with gate-source maximum voltage ratings of ±30V. It achieves a drain current of 250µA at a gate voltage of 5V, ensuring reliable performance in various power switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.