FQA90N10V2N-Channel 100 V 105A (Tc) 330W (Tc) Through Hole TO-3P
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ABRmicro #.ABR2045-FQA90N-1016745
ManufacturerOnsemi
MPN #.FQA90N10V2
Estimated Lead Time-
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Datasheet
FQA90N10V2(PDF)
FQA90N10V2(PDF)
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQA9
Continuous Drain Current (ID) @ 25°C105A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)191 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6150 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation330W (Tc)
RDS(on) Drain-to-Source On Resistance10mOhm @ 52.5A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3, SC-65-3
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQA90N10V2 is an N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum voltage of 100V and a continuous current of 105A at the case temperature (Tc). It features a total power dissipation capability of 330W at Tc, making it suitable for high-power applications. This component comes in a TO-3P through-hole package, facilitating reliable mounting and heat dissipation. It has a gate charge of 191 nC at a gate-source voltage of 10V, and a threshold gate voltage of 4V at 250µA. As a metal-oxide-semiconductor field-effect transistor, it plays a crucial role in controlling electrical signals within its specified limits.
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