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FQA7N60N-Channel 600 V 7.7A (Tc) 152W (Tc) Through Hole TO-3P

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ABRmicro #.ABR2045-FQA7N6-1030488
ManufacturerOnsemi
MPN #.FQA7N60
Estimated Lead Time-
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DatasheetDatasheetFQA7N60(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQA7
Continuous Drain Current (ID) @ 25°C7.7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1430 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation152W (Tc)
RDS(on) Drain-to-Source On Resistance1Ohm @ 3.9A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQA7N60
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQA7N60 is a high-voltage N-channel MOSFET manufactured by Onsemi. It is designed to handle a maximum voltage of 600 V and can conduct a continuous current of up to 7.7A when properly mounted, with a power dissipation capability of 152W under ideal thermal conditions. This transistor features a gate charge of 38 nC at 10 V and is housed in a TO-3P through-hole package, ensuring robust performance and durability in electronic circuits where high efficiency and power handling are required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.