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FQA47P06P-Channel 60 V 55A (Tc) 214W (Tc) Through Hole TO-3P

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ABRmicro #.ABR2045-FQA47P-996545
ManufacturerOnsemi
MPN #.FQA47P06
Estimated Lead Time-
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DatasheetDatasheetFQA47P06(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQA4
Continuous Drain Current (ID) @ 25°C55A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3600 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation214W (Tc)
RDS(on) Drain-to-Source On Resistance26mOhm @ 27.5A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQA47P06
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQA47P06 is a P-Channel MOSFET manufactured by Onsemi, designed for high-power applications. It operates with a maximum voltage of 60V and can handle continuous currents up to 55A when the case temperature (Tc) is managed effectively. The device is capable of dissipating up to 214W of power under specified conditions. Encased in a TO-3P package suitable for through-hole mounting, this MOSFET ensures efficient power management with an on-resistance of 26 milliohms at 27.5A and 10V gate-source voltage. Additionally, it features a threshold voltage of 4V at a gate current of 250µA, highlighting its effectiveness in controlling significant power loads within its operational parameters.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.