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FQA46N15_F109N-Channel 150 V 50A (Tc) 250W (Tc) Through Hole TO-3P

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ABRmicro #.ABR2045-FQA46N-1040308
ManufacturerOnsemi
MPN #.FQA46N15_F109
Estimated Lead Time-
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQA4
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3250 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance42mOhm @ 25A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3, SC-65-3
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQA46N15_F109 is an N-Channel MOSFET manufactured by Onsemi, designed for high-power applications requiring efficient performance. It operates with a maximum drain-source voltage of 150 V and can handle a continuous drain current of up to 50A at a case temperature (Tc). The device offers a substantial power dissipation capacity of 250W at Tc, indicating its suitability for demanding environments. Encased in a TO-3P package, the MOSFET ensures durability and robustness for through-hole mounting. It features a gate charge of 10V and a capacitance of 3250 pF at 25V, with a gate threshold voltage rated for ±25V, highlighting its capability to manage significant power levels while maintaining control efficiency.
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