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FQA28N50N-Channel 500 V 28.4A (Tc) 310W (Tc) Through Hole TO-3P

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ABRmicro #.ABR2045-FQA28N-924019
ManufacturerOnsemi
MPN #.FQA28N50
Estimated Lead Time-
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DatasheetDatasheetFQA28N50(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQA2
Continuous Drain Current (ID) @ 25°C28.4A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5600 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation310W (Tc)
RDS(on) Drain-to-Source On Resistance160mOhm @ 14.2A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQA28N50
Environmental Information
onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Wafer Fab/Site Transfer 02/Jan/2024
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Heat Sink Drawing Update 11/Feb/2014
PCN Obsolescence/ EOL
Multiple Devices 14/Mar/2011
PCN Packaging
Packing quantity increase 28/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)