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FQA28N15N-Channel 150 V 33A (Tc) 227W (Tc) Through Hole TO-3PN

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ABRmicro #.ABR2045-FQA28N-944796
ManufacturerOnsemi
MPN #.FQA28N15
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQA28N15, FQA28N15_F109(PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQA28
Continuous Drain Current (ID) @ 25°C33A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)52 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1600 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation227W (Tc)
RDS(on) Drain-to-Source On Resistance90mOhm @ 16.5A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQA28N15, FQA28N15_F109
Environmental Information
Material Declaration FQA28N15onsemi REACHonsemi RoHS
PCN Assembly/Origin
Assembly/Test 16/Nov/2023
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Devices 24/Oct/2017Packing quantity increase 28/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FQA28N15 is an N-Channel MOSFET designed to handle high power and voltage requirements, characterized by a drain-source voltage capability of 150V and a continuous drain current of 33A at a case temperature. It is housed in a robust TO-3PN through-hole package, providing a power dissipation capacity of 227W, making it suitable for high-power applications. The device features a gate threshold voltage of 4V at a test current of 250µA and exhibits a total gate charge of 52 nC when driven at 10V. The FQA28N15 utilizes metal-oxide-semiconductor technology, offering efficient switching performance and thermal management.
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