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FQA24N60N-Channel 600 V 23.5A (Tc) 310W (Tc) Through Hole TO-3PN

1:$6.8040

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ABRmicro #.ABR2045-FQA24N-953536
ManufacturerOnsemi
MPN #.FQA24N60
Estimated Lead Time28 Weeks
SampleGet Free Sample
DatasheetDatasheetFQA24N60(PDF)
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In Stock: 109
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.8040
Ext. Price$ 6.8040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.8040$6.8040
30$5.4330$162.9770
120$4.8600$583.1850
510$4.2880$2187.0080
1020$3.8600$3937.2640
2010$3.6180$7271.8030
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFQA24
Continuous Drain Current (ID) @ 25°C23.5A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)145 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5500 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation310W (Tc)
RDS(on) Drain-to-Source On Resistance240mOhm @ 11.8A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQA24N60
Environmental Information
Material Declaration FQA24N60onsemi REACHonsemi RoHS
PCN Assembly/Origin
Assembly/Test Transfer 18/Sep/2023
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Packing quantity increase 28/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQA24N60 is an N-Channel MOSFET manufactured by Onsemi, designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 600 volts and can handle a continuous drain current of 23.5 amps at the case temperature. Its power dissipation capability is rated at 310 watts when properly mounted in a through-hole TO-3PN package. The MOSFET operates with a gate threshold voltage of 10 volts, and it has an input capacitance of 5500 picofarads at 25 volts, indicating its efficiency in managing input signals with minimal delay.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.