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FQA22P10P-Channel 100 V 24A (Tc) 150W (Tc) Through Hole TO-3PN

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ABRmicro #.ABR2045-FQA22P-979351
ManufacturerOnsemi
MPN #.FQA22P10
Estimated Lead Time-
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DatasheetDatasheetFQA22P10(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQA2
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 12A, 10V
Package Type (Mfr.)TO-3PN
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQA22P10
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FQA22P10 is a P-channel MOSFET designed for power supply and switching applications. It is capable of handling a continuous drain current of up to 24 amperes at a case temperature (Tc), with a maximum power dissipation of 150 watts. This device operates at a drain-source voltage of 100 volts and features an on-resistance of 125 milliohms when conducting 12 amperes at a gate-source voltage of 10 volts. The MOSFET is encapsulated in a TO-3PN through-hole package and exhibits an input capacitance of 1500 picofarads at 25 volts.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.