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FQA18N50V2N-Channel 500 V 20A (Tc) 277W (Tc) Through Hole TO-3P

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ABRmicro #.ABR2045-FQA18N-928382
ManufacturerOnsemi
MPN #.FQA18N50V2
Estimated Lead Time-
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DatasheetDatasheetFQA18N50V2(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQA1
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3290 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation277W (Tc)
RDS(on) Drain-to-Source On Resistance265mOhm @ 10A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQA18N50V2
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQA18N50V2 is a robust N-channel MOSFET manufactured by Onsemi, designed for high-voltage and high-current applications. It can handle a maximum voltage of 500 V and a current of 20 A, making it suitable for demanding tasks requiring substantial power handling. Encased in a TO-3P package, this MOSFET can dissipate up to 277 W when mounted appropriately, ensuring efficient thermal management. The device features a gate charge of 55 nC at 10 V and a low input capacitance of 3290 pF at 25 V, which are beneficial in optimizing switching performance and enhancing efficiency. With a threshold voltage of 5 V at a test current of 250 µA, this semiconductor delivers reliable performance in various electronic setups.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.