The FQA13N50C is a high-voltage N-Channel MOSFET manufactured by Onsemi, designed for efficient power management and switching applications. This component features a drain-source voltage of 500 V and a continuous drain current of 13.5A under controlled conditions (at Tc). It is encapsulated in a TO-3P through-hole package, offering a power dissipation capability of up to 218W (at Tc). The MOSFET exhibits an input capacitance of 2055 pF (at 25 V), a total gate charge of 56 nC (at 10 V), and a gate threshold voltage of 4V (at 250µA), ensuring robust performance in diverse electrical environments.