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FJV4111RMTFPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 100 mA 200 MHz 200 mW Surface Mount SOT-23-3

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ABRmicro #.ABR2045-FJV411-972526
ManufacturerOnsemi
MPN #.FJV4111RMTF
Estimated Lead Time-
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DatasheetDatasheetFJV4111R(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFJV411
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Frequency - Transition200 MHz
Mounting StyleSurface Mount
Power - Max200 mW
Resistor - Base (R1)22 kOhms
Package Type (Mfr.)SOT-23-3
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Collector-Emitter Breakdown Voltage (Max.)40 V
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FJV4111R
Environmental Information
onsemi RoHS
PCN Design/Specification
Mold Compound 12/Dec/2007
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)