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FJP5021Bipolar (BJT) Transistor NPN 500 V 5 A 18MHz 50 W Through Hole TO-220-3

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ABRmicro #.ABR2045-FJP502-906971
ManufacturerOnsemi
MPN #.FJP5021
Estimated Lead Time-
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DatasheetDatasheetFJP5021(PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberFJP5021
Collector Current (Iᴄ)@25°C5 A
Collector Cut-off Current (Iᴄᴇs)(Max.)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 600mA, 5V
Frequency - Transition18MHz
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Power - Max50 W
Package Type (Mfr.)TO-220-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 600mA, 3A
Collector-Emitter Breakdown Voltage (Max.)500 V
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FJP5021
Environmental Information
onsemi REACHonsemi RoHS
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)