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FJN4305RTAPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92-3

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ABRmicro #.ABR2045-FJN430-975054
ManufacturerOnsemi
MPN #.FJN4305RTA
Estimated Lead Time-
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DatasheetDatasheetFJN4305(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Cut Tape (CT)Tape & Box (TB)
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Cut Tape (CT)
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberFJN430
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transition200 MHz
Mounting StyleThrough Hole
Power - Max300 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)10 kOhms
Package Type (Mfr.)TO-92-3
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FJN4305
Environmental Information
onsemi REACHonsemi RoHS
PCN Design/Specification
Copper Lead Frame 12/Oct/2007Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 16/Jul/2019
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)