ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
FDZ291PP-Channel 20 V 4.6A (Ta) 1.7W (Ta) Surface Mount 9-BGA (1.5x1.6)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDZ291-1031514
ManufacturerOnsemi
MPN #.FDZ291P
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDZ291P(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDZ29
Continuous Drain Current (ID) @ 25°C4.6A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1010 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.7W (Ta)
RDS(on) Drain-to-Source On Resistance40mOhm @ 4.6A, 4.5V
Package Type (Mfr.)9-BGA (1.5x1.6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case9-VFBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDZ291P
Environmental Information
onsemi REACHonsemi RoHS
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDZ291P is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. It features a maximum drain-source voltage of 20 V and can handle a continuous drain current of 4.6A at a given thermal rating. The device supports a power dissipation of 1.7W and is housed in a compact 9-BGA package measuring 1.5 x 1.6 mm. Its gate charge is rated at 13 nC at a gate-source voltage of 4.5 V, with a threshold voltage range allowing for operation at 1.5V and 4.5V. Additionally, it can withstand gate-source voltage spikes of up to ±8V, making it suitable for various electronic switching functions where space and power efficiency are priorities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.