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FDWS86068-F085N-Channel 100 V 80A (Tc) 214W (Ta) Surface Mount 8-DFN (5.1x6.3)

1:$2.9060

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDWS86-999323
ManufacturerOnsemi
MPN #.FDWS86068-F085
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetFDWS86068-F085(PDF)
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In Stock: 2172
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.9060
Ext. Price$ 2.9060
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.9060$2.9060
10$2.4440$24.4380
100$1.9760$197.6250
500$1.7560$878.1560
1000$1.5050$1504.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDWS86068
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)43 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2220 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation214W (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance6.4mOhm @ 80A, 10V
Package Type (Mfr.)8-DFN (5.1x6.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDWS86068-F085
Environmental Information
Material Declaration FDWS86068-F085onsemi REACHonsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
PCN Assembly/Origin
Mult Dev Assembly Chgs 16/Apr/2019
PCN Design/Specification
Specification Change 14/Nov/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDWS86068-F085 is an N-Channel MOSFET manufactured by Onsemi, designed for high-efficiency power management in compact, surface mount configurations. Encased in an 8-DFN package measuring 5.1x6.3mm, this MOSFET is capable of handling a drain-to-source voltage of up to 100V and a continuous drain current of 80A at a case temperature (Tc). It has a power dissipation capacity of 214W (when junction to ambient is considered as Ta). The device features a gate threshold voltage of 4V at a gate current of 250µA, and a total gate charge of 43 nC at 10V. With a drain-to-source on-resistance of 6.4mOhm at 80A with a gate voltage of 10V, it delivers efficient power switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.