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FDW256PP-Channel 30 V 8A (Ta) 1.3W (Ta) Surface Mount 8-TSSOP

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ABRmicro #.ABR2045-FDW256-1022579
ManufacturerOnsemi
MPN #.FDW256P
Estimated Lead Time-
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DatasheetDatasheetFDW256P(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDW25
Continuous Drain Current (ID) @ 25°C8A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2267 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.3W (Ta)
RDS(on) Drain-to-Source On Resistance13.5mOhm @ 8A, 10V
Package Type (Mfr.)8-TSSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-TSSOP (0.173", 4.40mm Width)
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Extended Links
Datasheets
FDW256P
Environmental Information
onsemi RoHS
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDW256P from Onsemi is a P-Channel MOSFET designed for surface mount applications, housed in an 8-TSSOP package. It is capable of handling a maximum voltage of 30 V and a continuous current of 8A at a rated power dissipation of 1.3W. The device exhibits a gate charge of 38 nC at 5 V, and its on-resistance is measured at 13.5mOhm under conditions of 8A current and 10V. Additionally, it has an input capacitance of 2267 pF at 15 V, making it suitable for efficient switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.