FDT86256N-Channel 150 V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4
1:$1.1540
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ABRmicro #.ABR2045-FDT862-1000268
ManufacturerOnsemi
MPN #.FDT86256
Estimated Lead Time-
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Datasheet
FDT86256(PDF)
FDT86256(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1540
Ext. Price$ 1.1540
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1540$1.1540
10$0.9420$9.4240
100$0.7330$73.3130
500$0.6220$310.7810
1000$0.5070$506.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDT86
Continuous Drain Current (ID) @ 25°C1.2A (Ta), 3A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)73 pF @ 75 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.3W (Ta), 10W (Tc)
RDS(on) Drain-to-Source On Resistance845mOhm @ 1.2A, 10V
Package Type (Mfr.)SOT-223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDT86256 is a surface-mount N-Channel MOSFET manufactured by Onsemi, designed for use in various electronic applications. It can handle a maximum voltage of 150 V and has a current capacity of 1.2A at ambient temperature (Ta) and 3A when mounted on a suitable thermal base (Tc). The power dissipation is rated at 2.3W in free air and 10W with good thermal management. This MOSFET comes in a compact SOT-223-4 package and features a gate charge of 73 pF at 75 V, with an on-resistance of 845 mOhm at 1.2A and 10V gate-source voltage. The part operates effectively within the specified range and conditions, ensuring reliable performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.