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FDS8880N-Channel 30 V 11.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

1:$0.6840

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDS888-1023311
ManufacturerOnsemi
MPN #.FDS8880
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetFDS8880(PDF)
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In Stock: 14013
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.6840
Ext. Price$ 0.6840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6840$0.6840
10$0.5930$5.9290
100$0.4110$41.1190
500$0.3430$171.5940
1000$0.2920$292.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDS88
Continuous Drain Current (ID) @ 25°C11.6A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1235 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance10mOhm @ 11.6A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDS8880
Environmental Information
Material Declaration FDS8880onsemi RoHS
PCN Assembly/Origin
Mult Dev Sourcing Chg 21/Mar/2018
PCN Design/Specification
Logo 17/Aug/2017Mold Compound 12/Dec/2007
PCN Packaging
Mult Devices 24/Oct/2017Mult MSL1 Pkg Chg 20/Dec/2018
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS8880 by Onsemi is an N-channel MOSFET designed for surface-mount applications, housed in an 8-SOIC package. It supports a maximum drain-source voltage of 30V and a continuous current of 11.6A under specific conditions (Ta). The MOSFET offers low on-resistance, measured at 10 milliohms when conducting 11.6A at a gate voltage of 10V, making it efficient for power handling. It can dissipate up to 2.5W of power, providing reliability within its operating range. The FDS8880 is suitable for integration into spaces requiring compact, surface-mounted components.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.