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FDS86267PP-Channel 150 V 2.2A (Ta) 1W (Ta) Surface Mount 8-SOIC

1:$1.3860

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDS862-944065
ManufacturerOnsemi
MPN #.FDS86267P
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetFDS86267P(PDF)
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In Stock: 1274
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3860
Ext. Price$ 1.3860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3860$1.3860
10$1.1340$11.3370
100$0.8820$88.1880
500$0.7480$374.0000
1000$0.6090$608.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDS86267
Continuous Drain Current (ID) @ 25°C2.2A (Ta)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1130 pF @ 75 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance255mOhm @ 2.2A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDS86267P
Environmental Information
Material Declaration FDS86267Ponsemi REACHonsemi RoHS
PCN Assembly/Origin
Qualify 2nd supplier 13/Aug/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Mult MSL1 Pkg Rev 20/Dec/2018
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS86267P is a P-Channel MOSFET manufactured by Onsemi, encapsulated in a compact 8-SOIC surface-mount package. It is designed to handle a maximum voltage of 150 V and current of 2.2 A when mounted on a suitable surface, with a power dissipation of 1 W under similar conditions. This MOSFET features a gate-source threshold voltage of 4 V at a gate current of 250 µA. It exhibits a total gate charge of 16 nC when operated at 10 V, and a typical input capacitance of 1130 pF at 75 V, making it suitable for efficient switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.