FDS86240N-Channel 150 V 7.5A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
1:$2.3680
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ABRmicro #.ABR2045-FDS862-925478
ManufacturerOnsemi
MPN #.FDS86240
Estimated Lead Time20 Weeks
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Datasheet
FDS86240(PDF)
FDS86240(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.3680
Ext. Price$ 2.3680
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3680$2.3680
10$1.9890$19.8900
100$1.6090$160.8630
500$1.4300$715.0630
1000$1.2240$1224.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDS86
Continuous Drain Current (ID) @ 25°C7.5A (Ta)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2570 pF @ 75 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 5W (Tc)
RDS(on) Drain-to-Source On Resistance19.8mOhm @ 7.5A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS86240 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power management in electronic circuits. It features a maximum drain-source voltage of 150V and can handle a continuous drain current of 7.5A when mounted on a suitable heatsink (Tc) with a power dissipation of up to 5W. In a standard surface mount 8-SOIC package, this MOSFET exhibits a low on-state resistance of 19.8 milliohms at 7.5A and 10V, ensuring minimal power loss during operation. The device also displays a gate charge of 40 nC at 10V, with an input capacitance of 2570 pF at 75V, making it suitable for high-frequency applications where efficient switching is required.
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