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FDS7088SN3N-Channel 30 V 21A (Ta) 3W (Ta) Surface Mount 8-SO FLMP
N/A
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ABRmicro #.ABR2045-FDS708-978911
ManufacturerOnsemi
MPN #.FDS7088SN3
Estimated Lead Time-
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DatasheetFDS7088SN3(PDF)
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDS70
Continuous Drain Current (ID) @ 25°C21A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3230 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3W (Ta)
RDS(on) Drain-to-Source On Resistance4mOhm @ 21A, 10V
Package Type (Mfr.)8-SO FLMP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
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PCN Design/Specification
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS7088SN3 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power management in compact applications. It operates with a drain-source voltage of up to 30V and can handle a continuous current of 21A (Ta), with a power dissipation of 3W (Ta). This surface-mount component features a low on-resistance, specified as 4 milliohms at 21A with a gate-source voltage of 10V, making it suitable for minimizing power loss. It also features a gate threshold voltage of 3V at 1mA, facilitating ease in switching operations. Encased in an 8-SO FLMP package, it is designed for reliable performance in space-constrained environments.
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