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FDS7066N7N-Channel 30 V 23A (Ta) 3W (Ta) Surface Mount 8-SO FLMP

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ABRmicro #.ABR2045-FDS706-1014368
ManufacturerOnsemi
MPN #.FDS7066N7
Estimated Lead Time-
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DatasheetDatasheetFDS7066N7(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDS70
Continuous Drain Current (ID) @ 25°C23A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)69 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4973 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3W (Ta)
RDS(on) Drain-to-Source On Resistance4.5mOhm @ 23A, 10V
Package Type (Mfr.)8-SO FLMP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDS7066N7
Environmental Information
onsemi REACHonsemi RoHS
PCN Design/Specification
Mold Compound 27/March/2008
PCN Obsolescence/ EOL
Multiple Devices 03/Dec/2009
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS7066N7 is an N-Channel MOSFET transistor manufactured by Onsemi, designed for surface mount applications. It operates at a maximum drain-to-source voltage of 30 V and supports a continuous current of up to 23 A in ideal conditions. With a power dissipation of 3W, the component is housed in an 8-SO FLMP package. The MOSFET features a low on-state resistance of 4.5 mOhm at a gate-source voltage of 10V and a drain current of 23A, making it suitable for efficiently carrying significant current loads. It is rated to handle gate-source voltages up to ±16V.
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