FDS6680AN-Channel 30 V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
1:$0.7690
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ABRmicro #.ABR2045-FDS668-1019551
ManufacturerOnsemi
MPN #.FDS6680A
Estimated Lead Time14 Weeks
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Datasheet
FDS6680A(PDF)
FDS6680A(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7690
Ext. Price$ 0.7690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7690$0.7690
10$0.6280$6.2790
100$0.4880$48.7690
500$0.4130$206.6560
1000$0.3380$337.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDS6680
Continuous Drain Current (ID) @ 25°C12.5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1620 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance9.5mOhm @ 12.5A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS6680A is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications in an industry-standard 8-SOIC package. It operates with a drain-source voltage of up to 30 volts and can handle a continuous drain current of 12.5 amps at ambient temperature (Ta). The device offers a total power dissipation of up to 2.5 watts under similar conditions. Its gate-source voltage can vary up to ±20 volts, and it features a gate charge of 23 nanocoulombs at 5 volts, signifying its switching characteristics. With a gate threshold voltage of 3 volts at 250 microamps, the FDS6680A provides reliable performance for various electronic applications requiring efficient power management and control.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.