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FDS6680N-Channel 30 V 11.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-FDS668-965566
ManufacturerOnsemi
MPN #.FDS6680
Estimated Lead Time-
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DatasheetDatasheetFDS6680(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDS66
Continuous Drain Current (ID) @ 25°C11.5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2070 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance10mOhm @ 11.5A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Extended Links
Datasheets
FDS6680
Environmental Information
onsemi RoHS
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS6680 is an N-Channel MOSFET manufactured by Onsemi, designed for high-efficiency power switching applications. It features a low on-resistance of 10mOhm at a current of 11.5A and a gate-source voltage of 10V, which contributes to its performance in managing power loss. The component can handle a maximum voltage of 30V and supports currents up to 11.5A while dissipating up to 2.5W of power in a surface mount configuration. Packaged in an 8-SOIC, it allows for convenient integration into compact circuit designs, operating efficiently within a gate-source voltage range of ±20V.
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