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FDS6676ASN-Channel 30 V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-FDS667-1012689
ManufacturerOnsemi
MPN #.FDS6676AS
Estimated Lead Time-
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DatasheetDatasheetFDS6676AS(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®, SyncFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDS66
Continuous Drain Current (ID) @ 25°C14.5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2510 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance6mOhm @ 14.5A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Extended Links
Datasheets
FDS6676AS
Environmental Information
Material Declaration FDS6676ASonsemi REACHonsemi RoHS
PCN Assembly/Origin
FDSYYY 18/Jun/2018
PCN Design/Specification
Logo 17/Aug/2017Mold Compound 12/Dec/2007
PCN Obsolescence/ EOL
Mult Dev 07/Aug/2020
PCN Packaging
Mult Devices 24/Oct/2017Mult MSL1 Pkg Chg 20/Dec/2018
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS6676AS is an N-Channel MOSFET manufactured by Onsemi, designed for surface-mount applications. It operates efficiently at a voltage of 30V and supports a current of up to 14.5A with a power dissipation capability of 2.5W, both measured under ambient conditions. This MOSFET features a threshold voltage of 4.5V and 10V, and it exhibits a capacitance of 2510 pF with a 15V bias. The component is housed in an 8-pin SOIC package, which is commonly used for compact and space-constrained electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.