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FDS6670ASN-Channel 30 V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-FDS667-971145
ManufacturerOnsemi
MPN #.FDS6670AS
Estimated Lead Time-
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DatasheetDatasheetFDS6670AS Datasheet(PDF)
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®, SyncFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDS66
Continuous Drain Current (ID) @ 25°C13.5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1540 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance9mOhm @ 13.5A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Extended Links
Datasheets
FDS6670AS Datasheet
Environmental Information
Material Declaration FDS6670ASonsemi RoHS
PCN Assembly/Origin
FDSYYY 18/Jun/2018
PCN Design/Specification
Logo 17/Aug/2017Mold Compound 12/Dec/2007
PCN Obsolescence/ EOL
Mult Dev EOL 12/Aug/2020Mult Dev EOL 14/Jan/2022
PCN Packaging
Mult Devices 24/Oct/2017Mult MSL1 Pkg Chg 20/Dec/2018
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS6670AS is a surface-mount N-Channel MOSFET manufactured by Onsemi, featuring a drain-source voltage of 30 volts and a continuous drain current of 13.5A under specified conditions. It comes in an 8-SOIC package and is designed to dissipate a power of 2.5W, also specified under certain conditions. The device exhibits a low on-resistance of 9 milliohms when conducting 13.5A with a gate-source voltage of 10V, ensuring efficient performance. Additionally, the MOSFET has an input capacitance of 1540 pF at 15 V, which facilitates its functioning in switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.