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FDS6630AN-Channel 30 V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-FDS663-963481
ManufacturerOnsemi
MPN #.FDS6630A
Estimated Lead Time-
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DatasheetDatasheetFDS6630A(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDS66
Continuous Drain Current (ID) @ 25°C6.5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)460 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance38mOhm @ 6.5A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Extended Links
Datasheets
FDS6630A
Environmental Information
Material Declaration FDS6630Aonsemi REACHonsemi RoHS
PCN Design/Specification
Logo 17/Aug/2017Mold Compound 12/Dec/2007
PCN Obsolescence/ EOL
Mult Dev EOL 17/Aug/2020
PCN Packaging
Mult Devices 24/Oct/2017Mult MSL1 Pkg Chg 20/Dec/2018
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS6630A is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications in an 8-SOIC package. It supports a maximum voltage of 30V and can handle a continuous drain current of 6.5 Amps at a power dissipation of 2.5 Watts, making it suitable for moderate power applications. The part operates efficiently with gate-source voltages of 4.5V and 10V, featuring a low on-state resistance of 38 milliohms at 6.5A and 10V. These specifications enable it to provide reliable switching performance in compact spaces.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.