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FDS5690-NBBM009AN-Channel 60 V 7A (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-FDS569-914564
ManufacturerOnsemi
MPN #.FDS5690-NBBM009A
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDS5690(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 13, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDS56
Continuous Drain Current (ID) @ 25°C7A (Ta)
Drain-to-Source Voltage (VDS)60 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1107 pF @ 30 V
Mfronsemi
Mounting StyleSurface Mount
RDS(on) Drain-to-Source On Resistance28mOhm @ 7A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDS5690
Environmental Information
Material Declaration FDS5690-NBBM009Aonsemi REACHonsemi RoHS
PCN Assembly/Origin
Korea Fab Site Add 3/Jan/2017
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 14/Jan/2022Mult Dev EOL 24/Dec/2021
PCN Packaging
Mult Devices 24/Oct/2017
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)