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FDS5170N7N-Channel 60 V 10.6A (Ta) 3W (Ta) Surface Mount 8-SO FLMP

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ABRmicro #.ABR2045-FDS517-983014
ManufacturerOnsemi
MPN #.FDS5170N7
Estimated Lead Time-
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DatasheetDatasheetFDS5170N7(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDS51
Continuous Drain Current (ID) @ 25°C10.6A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)71 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2889 pF @ 30 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3W (Ta)
RDS(on) Drain-to-Source On Resistance12mOhm @ 10.6A, 10V
Package Type (Mfr.)8-SO FLMP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
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Extended Links
Datasheets
FDS5170N7
Environmental Information
onsemi REACHonsemi RoHS
PCN Design/Specification
Mold Compound 27/March/2008
PCN Obsolescence/ EOL
Multiple Devices 03/Dec/2009
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS5170N7, manufactured by Onsemi, is an N-Channel MOSFET designed for surface mount applications. It operates with a drain-source voltage of 60 V and a continuous drain current of 10.6A (when considering ambient temperature, Ta). The component is housed in an 8-SO FLMP package, supporting up to 3W of power dissipation under specified conditions. It features a gate-source voltage tolerance of ±20V and exhibits a low on-resistance of 12 milliohms when conducting at 10.6A with a gate-source voltage of 10V. The gate charge is measured at 71 nanocoulombs at a gate-source voltage of 10V, indicating its efficiency in switching applications.
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