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FDS4435BZ-F085P-Channel 30 V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-FDS443-991063
ManufacturerOnsemi
MPN #.FDS4435BZ-F085
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDS4435BZ_F085(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDS4435
Continuous Drain Current (ID) @ 25°C8.8A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1845 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance20mOhm @ 8.8A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDS4435BZ_F085
Environmental Information
Material Declaration FDS4435BZ-F085onsemi REACHonsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 20/Dec/2021
PCN Packaging
MSL1 Pkg Chg 20/Dec/2018Mult Devices 24/Oct/2017
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Video File
Driving Automotive Technology
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS4435BZ-F085 is a P-channel MOSFET manufactured by Onsemi, designed for surface mount applications and packaged in an 8-SOIC configuration. This transistor can handle a maximum voltage of 30 V and a current of 8.8 A at ambient temperature with a power dissipation of 2.5 W. It operates with gate-source voltages of 4.5V and 10V, and has a gate threshold voltage of 3V at a drain current of 250µA. The device is suitable for use in systems where efficient power management in compact layouts is necessary.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.