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FDS4435P-Channel 30 V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N/A
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ABRmicro #.ABR2045-FDS443-1015790
ManufacturerOnsemi
MPN #.FDS4435
Estimated Lead Time-
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DatasheetFDS4435(PDF)
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberFDS44
Continuous Drain Current (ID) @ 25°C8.8A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1604 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance20mOhm @ 8.8A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FDS4435 is a P-Channel MOSFET designed for surface mounting, housed in an 8-SOIC package. It is capable of handling a maximum voltage of 30 volts and a continuous current of up to 8.8 amps under suitable conditions. The device offers a low on-resistance of 20 milliohms at 8.8 amps and 10 volts, ensuring efficient conductivity. Its gate charge is measured at 24 nanocoulombs at 5 volts, and it features an input capacitance of 1604 picofarads at 15 volts, indicating its ability to switch efficiently. Furthermore, it has a power dissipation capability of 2.5 watts, contributing to its utility in thermal management.
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