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FDS4080N3N-Channel 40 V 13A (Ta) 3W (Ta) Surface Mount 8-SO FLMP

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ABRmicro #.ABR2045-FDS408-997412
ManufacturerOnsemi
MPN #.FDS4080N3
Estimated Lead Time-
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DatasheetDatasheetFDS4080N3(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberFDS40
Continuous Drain Current (ID) @ 25°C13A (Ta)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1750 pF @ 20 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3W (Ta)
RDS(on) Drain-to-Source On Resistance10.5mOhm @ 13A, 10V
Package Type (Mfr.)8-SO FLMP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDS4080N3
Environmental Information
onsemi RoHS
PCN Design/Specification
Mold Compound 27/March/2008
PCN Obsolescence/ EOL
Multiple Devices 03/Dec/2009
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS4080N3 is a surface-mounted semiconductor device manufactured by Onsemi, designed as an N-Channel MOSFET. It operates at a voltage of 40 V and can handle a current of 13A. The part features a compact 8-SO FLMP (Flat Lead Mini Package) for efficient thermal management, with a power dissipation capacity of 3W. It has a low on-resistance of 10.5 milliohms when conducting 13A at 10V, and a total gate charge of 40 nC at 10V, indicating its capability for efficient switching. The MOSFET requires a gate-source threshold voltage of 5V while drawing 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.