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FDS3680N-Channel 100 V 5.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-FDS368-1008488
ManufacturerOnsemi
MPN #.FDS3680
Estimated Lead Time-
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DatasheetDatasheetFDS3680(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDS36
Continuous Drain Current (ID) @ 25°C5.2A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)53 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1735 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance46mOhm @ 5.2A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Extended Links
Datasheets
FDS3680
Environmental Information
onsemi RoHS
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS3680 is an N-Channel MOSFET manufactured by Onsemi, designed for surface-mount applications and housed in an 8-SOIC package. It operates with a maximum voltage of 100 V and can handle a continuous current of 5.2A at room temperature with a power dissipation of 2.5W. The device has a gate charge capacitance of 1735 pF at 50 V and a gate threshold voltage of 4V at 250µA. It features a low on-state resistance of 46mOhm at a current of 5.2A with a gate-source voltage of 10V, making it suitable for efficient switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.