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FDS3672N-Channel 100 V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
1:$1.2990
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ABRmicro #.ABR2045-FDS367-1036260
ManufacturerOnsemi
MPN #.FDS3672
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetFDS3672 Datasheet(PDF)
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In Stock: 4096
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.2990
Ext. Price$ 1.2990
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2990$1.2990
10$1.0600$10.6040
100$0.8250$82.4500
500$0.6990$349.5630
1000$0.5700$569.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDS36
Continuous Drain Current (ID) @ 25°C7.5A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)37 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2015 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance23mOhm @ 7.5A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS3672 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient voltage regulation and switching applications. It can handle a maximum voltage of 100V and a current of 7.5A in surface mount applications, with a power dissipation capability of up to 2.5W when mounted on an 8-SOIC package. The device operates with a gate-source voltage range of ±20V and features an input capacitance of 2015 pF at 25 V and a gate charge of 37 nC at 10 V, making it suitable for a range of power management tasks in compact electronic designs.
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