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FDS2672-F085N-Channel 200 V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-FDS267-905374
ManufacturerOnsemi
MPN #.FDS2672-F085
Estimated Lead Time-
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 6, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDS2672
Continuous Drain Current (ID) @ 25°C3.9A (Ta)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)46 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2535 pF @ 100 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance70mOhm @ 3.9A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)